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PC Components, NVMe drive, Computer Science
Samsung SSD 9100 PRO – Disque SSD Interne NVMe M.2 – 1 To
FEATURES:
■ Brand:Samsung
■ Modèle : MZ-VAP1T0BW
■ Capacity: 1 TB
■ Interface: PCIe 5.0 x4 / NVMe 2.0
■ Format: M.2 2280
■ Endurance : 600 TBW
318,91 €The price includes applicable VAT.
Samsung SSD 9100 PRO – Ultimate Performance and Efficiency
Unmatched speeds for extreme performance
Le Samsung 9100 PRO redefines speed with breathtaking performance. Thanks to the PCIe 5.0 technology, it offers
sequential read speeds of up to 14,800 MB/s and writing skills reaching 12,500 MB/s.[1]
Its ability to handle up to 2,000K IOPS on shuffle [2] ensures unmatched fluidity and responsiveness, even for the most demanding tasks.
Revolutionary energy efficiency
The 9100 PRO outperforms its predecessors with a exceptional energy efficiency, offering up to 1,822 MB/s per watt in sequential reading [3].
This technological advancement reduces energy consumption while maintaining high performance, making it ideal for configurations that require thermal and energy optimization.
Technical Specifications
| Feature | Détails |
|---|---|
| Interface | PCIe 5.0 NVMe |
| Reading speed | Jusqu’à 14 800 Mo/s [1] |
| Vitesse d’écriture | Jusqu’à 12 500 Mo/s |
| Lecture aléatoire | 2,000K IOPS [2] |
| Efficacité énergétique | 1,822 MB/s per watt [3] |
[1] La vitesse de lecture séquentielle du 9100 PRO 4 To est de 14 800 Mo/s, celle du 990 PRO 4 To de 7 450 Mo/s.
[2] Input/output operations per second = opérations d’entrée-sortie par seconde.
[3] L’efficacité énergétique du 9100 PRO 2 To en lecture séquentielle et en écriture est respectivement de 1 822 et 1 703 Mo/s par Watt, celle du 990 PRO 4 To est respectivement de 1 221 et 1 255 Mo/s par Watt.
| Brand | Samsung |
| Model | MZ-VAP1T0BW |
| Capacity | 1 TB |
| NAND | Samsung V NAND TLC (V8) |
| Interface | PCIe 5.0 x4 / NVMe 2.0 |
| Format | M.2 2280 |
| Cryptage | Class 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667) |
| Sequential reading | 14 700 Mo/s |
| Sequential writing | 13 300 Mo/s |
| Lecture aléatoire | 1 850 kIOPS |
| Écriture aléatoire | 2 600 kIOPS |
| DRAM Cache | 1 Go LPDDR4X |
| Endurance | 600 TBW |
| Consommation en lecture | 7,6 W |
| Consommation en écriture | 7,2 W |
| Intelligent TurboWrite 2.0 | 114 Go |
| EAN | 8806095811628 |
| Warranty | 5 years |
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Samsung SSD 9100 PRO - Disque SSD Interne NVMe M.2 - 1 To
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